توضیحات
Type Designator: IRF4905
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 74 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 180(max) nC
Rise Time (tr): 99 nS
Drain-Source Capacitance (Cd): 1400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
هنوز هیچ بررسی وجود ندارد.