توضیحات
Specification
Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: PNP
Subcategory: Transistors
Technology: Si
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 500 mA
Pd – Power Dissipation: 625 mW
Gain Bandwidth Product fT: 80 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
DC Current Gain hFE Max: 100 at 100 mA, 1 V
Product Type: BJTs – Bipolar Transistors
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